bas40-02v document number 85651 rev. 1.4, 05-aug-10 vishay semiconductors www.vishay.com 1 1 8 554 1 2 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal schottky diode features ? this diode features very low turn-on voltage and fast switching. ? this device is protected by a pn junction guard ring against excessive voltage, such as electrostatic discharges. ? space saving sod-523 package ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sod-523 molding compound flammability rating: ul 94 v-0 terminals: high temperature soldering guaranteed: 260 c/10 s at terminals weight: approx. 1.6 mg packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified part ordering code marking remarks bas40-02v BAS40-02V-GS18 or bas40-02v-gs08 w tape and reel parameter test condition symbol value unit repetitive peak reverse voltage v rrm 40 v forward continuous current i f 200 ma surge forward current t p < 1 s i fsm 600 ma power dissipation p tot 200 mw parameter test condition symbol value unit junction soldering point r thjs 100 k/w junction temperature t j 125 c storage temperature range t stg - 55 to +150 c
www.vishay.com 2 document number 85651 rev. 1.4, 05-aug-10 bas40-02v vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics t amb = 25 c, unless otherwise specified package dimensions in millimeters (inches): sod-523 parameter test condition symbol min ty p. max unit reverse breakdown voltage i r = 10 a (pulsed) v (br) 40 v leakage current pulse test v r = 30 v, t p < 300 si r 20 100 na forward voltage pulse test t p < 300 s, i f = 1 ma v f 380 mv pulse test t p < 300 s, i f = 40 ma, v f 1000 mv diode capacitance v r = 0 v, f = 1 mhz c d 45pf reverse recovery time i f = 10 ma, i r = 10 ma, i rr = 1 ma, r l = 100 t rr 5ns foot print recommendation: rev. g - date: 13.april 2010 16864 document no.: s8-v-3880.02-001 (4) 0.4 (0.016) 1.45 (0.057) 0.35 (0.014) 1.3 (0.051) 1.1 (0.043) 0.35 (0.014) 0.18 (0.007) 1.7 (0.067) 1.5 (0.059) 0.2 (0.008) 0.08 (0.003) 0.9 (0.035) 0.7 (0.028) 0.7 (0.028) 0.5 (0.020) max. 0.8
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